(China (Mainland))
Product Summary
The JANTX2N6661 is a PNP darlington power silicon transistor.
Parametrics
Absolute maximum ratings: (1)Collector-Emitter Voltage: -80 Vdc; (2)Collector-Base Voltage: -80 Vdc; (3)Emitter-Base Voltage: -5.0 Vdc; (4)Base Current: -0.25 Adc; (5)Collector Current: -10 Adc; (6)Total Power Dissipation @ TA = +25℃: 5.0 W, @ TC = +25℃: 85 W; (7)Operating & Storage Junction Temperature Range: -65 to +175 ℃.
Features
Features: (1)Forward-Current Transfer Ratio: IC = -1.0 Adc, VCE = 3.0 Vdc: 300 min and 20,000 max, IC = -5.0 Adc, VCE = 3.0 Vdc: 1,000 min and 20,000 max, IC = -10 Adc, VCE = 3.0 Vdc: 100 min and 20,000 max; (2)Collector-Emitter Saturation Voltage: IC =-5 .0 Adc, IB = -10 mAdc: -2.0 Vdc, IC = -10 Adc, IB = -0.1 Adc: -3.0 Vdc; (3)Base-Emitter Voltage: IC = -5.0 Adc, VCE = -3.0 Vdc: -2.8 Vdc, IC = -10 Adc, VCE = -3.0 Vdc: -4.5 Vdc.
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Other |
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Data Sheet |
Negotiable |
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Data Sheet |
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DIODE 1A 200V AXIAL |
Data Sheet |
Negotiable |
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Data Sheet |
Negotiable |
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Data Sheet |
Negotiable |
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JANTX1N6762 |
Other |
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Data Sheet |
Negotiable |
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